DDR4 SD RAM SO-DIMM Power Supply: VDD=1.2V (1.14V to 1.26V) VDDQ = 1.2V (1.14V to 1.26V) VPP - 2.5V (2.375V to 2.75V) VDDSPD=2.25V to 3.6V Functionality and operations comply with the DDR4 SDRAM datasheet 16 internal banks Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or different bank group accesses are available Data transfer rates: PC4-2133 Bi-Directional Differential Data Strobe 8 bit pre-fetch Burst Length (BL) switch on-the-fly BL 8 or BC4 (Burst Chop) Supports ECC error correction and detection On-Die Termination ( ODT ) Temperature sensor with integrated SPD for ECC SO-DIMM This product is in compliance with the RoHS directive. Per DRAM Address ability is supported Internal Vref DQ level generation is available